IRLL2703TR【PDF 2/8 页】MOSFET N-CH 30V 3.9A SOT223

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IRLL2703

Electrical Characteristics @ T J = 25°C (unless otherwise specified)

Parameter

Min.

Typ.

Max. Units

Conditions

V (BR)DSS

? V (BR)DSS / ? T J

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

30

–––

–––

–––

0.06

–––

––– V V GS = 0V, I D = 250μA

––– V/°C Reference to 25°C, I D = 1mA

0.045 V GS = 10V, I D = 3.9A ?

R DS(on)

Static Drain-to-Source On-Resistance

–––

–––

0.060

?

V GS = 5.0V, I D = 3.1A ?

–––

–––

0.070 V GS = 4.0V, I D = 2.0A ?

––– R G = 6.2 ?

V GS(th)

g fs

I DSS

I GSS

Q g

Q gs

Q gd

t d(on)

t r

t d(off)

t f

C iss

C oss

C rss

Gate Threshold Voltage

Forward Transconductance

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

1.0

5.9

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

9.3

2.3

5.1

7.4

24

6.9

14

530

230

95

2.4 V V DS = V GS , I D = 250μA

––– S V DS = 25V, I D = 2.3 A

25 V DS = 30V, V GS = 0V

μA

250 V DS = 24V, V GS = 0V, T J = 125°C

100 V GS = 16V

nA

-100 V GS = -16V

14 I D = 2.3A

3.4 nC V DS = 24V

7.6 V GS = 5.0V, See Fig. 6 and 9 ?

––– V DD = 15V

––– I D = 2.3A

ns

––– R D = 6.5 ?, See Fig. 10 ?

––– V GS = 0V

––– pF V DS = 25V

––– ? = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Conditions

I S

I SM

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode) ?

––– ––– 3.9

––– ––– 16

A

MOSFET symbol

showing the

integral reverse

p-n junction diode.

V SD

t rr

Q rr

t on

Notes:

Diode Forward Voltage

Reverse Recovery Time

Reverse RecoveryCharge

Forward Turn-On Time

––– ––– 1.0 V T J = 25°C, I S = 2.3A, V GS = 0V ?

––– 42 63 ns T J = 25°C, I F = 2.3A

––– 62 94 nC di/dt = 100A/μs ?

Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D )

? Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

? Starting T J = 25°C, L = 24 mH

R G = 25 ? , I AS = 3.9A. (See Figure 12)

2

? I SD ≤ 2.3A, di/dt ≤ 150A/μs, V DD ≤ V (BR)DSS ,

T J ≤ 150°C

? Pulse width ≤ 300μs; duty cycle ≤ 2%.

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